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关注：1
2013-05-23 12:21
求翻译：在本文中，我们将分析10nm以内光刻图案使用的极紫外干涉光刻技术。为了实现高分辨率，高效、均匀和线边缘粗糙度低的光栅是必需的。We report the fabrication of efficient Mo gratings on membranes at sub-50 nm scale and investigate, theoretically and experimentally, these diffraction gratings for EUV-IL利用二阶衍射光束使得a 4× reduction of the feature sizes at the wafer level compared to the mask 是什么意思？ 待解决
 悬赏分：1
- 离问题结束还有
在本文中，我们将分析10nm以内光刻图案使用的极紫外干涉光刻技术。为了实现高分辨率，高效、均匀和线边缘粗糙度低的光栅是必需的。We report the fabrication of efficient Mo gratings on membranes at sub-50 nm scale and investigate, theoretically and experimentally, these diffraction gratings for EUV-IL利用二阶衍射光束使得a 4× reduction of the feature sizes at the wafer level compared to the mask
问题补充： |
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2013-05-23 12:21:38
正在翻译，请等待...
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2013-05-23 12:23:18
In this article, we will analyze the moment within 10 NM of the pattern uses a UV-Interference lithography. In order to achieve high-resolution, high-efficiency, uniformity and Line Edge roughness, low light is required. We
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2013-05-23 12:24:58
In this paper, we will analyze in 10nm the photoetching design use side ultraviolet interference photoetching technology.In order to realize the high resolution, highly effective, even and the line%
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2013-05-23 12:26:38
In this article, we will analyze the 10nm to neiguang interference lithography patterns using extreme ultraviolet. In order to achieve high resolution, high efficiency, and low line edge roughness of Bragg gratings are required. We report the fabrication of efficient Mo gratings on membranes at sub-
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2013-05-23 12:28:18
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