求翻译：如9.11节所述，为了增强激光工作所需的受激辐射，需要分步反转，为了达到半导体激光中的分步反转，我们先考虑简并型半导体间接形成的P-n结或异质结.这表示结两端的参杂能级甚高，以至于在P型区的费米能级EFV比价带的边缘还低，而在n型区的费米能级EFC则高于导带的边缘.当外加一足够大的偏压时，会产生大注入的情况，亦即会有很高浓度的电子与空穴注入转移区，结果在d区域中，导带有大量的电子而价带则拥有大量的空穴，这就是分步反转所需的条件.对于本征跃迁，所需的最小能量就是禁带宽度Eg是什么意思？

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For example, as described in section 9.11 in order to enhance the laser work required by stimulated emission of radiation, there is a need to step-by-step inversion, in order to achieve semiconductor laser in the step-by-step inversion, we first consider in semiconductor and indirectly P -n or heter

If 9.11 state, in order to strengthen the stimulated radiation which the laser work needs, needs to divide the step the reverse, in order to achieve in the semiconductor laser a minute step the reverse, we considered first the degeneration semiconductor forms indirectly P-n ties or the neterogeny kn

As 9.11 section by in, to enhanced laser work by needed of by stress radiation, needs min step reverse, to reached Semiconductor Laser in the of min step reverse, we first considered Jane and type semiconductor indirect formed of P-n knot or different mass knot. This said knot ends of make-level ver

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