求翻译：以GaN为代表的氮化物（纤锌矿） 半导体材料在短波光电子和光探测器件（蓝、绿光和紫外光）、高频大功率和耐高温器件方面具有远胜于硅Si与砷化稼GaAs的优势，是什么意思？

Gan as the representative of nitrides (wurtzite) semiconductor materials in the short-wave optoelectronics and optical detectors (blue, green and UV), high-frequency high-power and high temperature devices better than silicon si arsenide Jia gaas the advantages of

In order to GaN on behalf of the nitrate (former Yugoslavia) semiconductor material zinc mine in short-wave photonics and optical detectors (blue, green and violet), high-frequency power and Resistance Temperature devices have far better than silicon and gallium Si GaAs shoulders of advantages.

正在翻译，请等待...

正在翻译，请等待...

Take GaN as representative's nitride (spiauterite) the semiconducting material in the short wave photoelectron and the light survey component (blue, green light and ultraviolet ray), the high frequency high efficiency and the thermostable component aspect has by far in silicon Si and the arsenide of