求翻译：以上两个原因决定了异质结的上层半导体存在一个最佳厚度, 超过这一厚度,内建电场的作用减弱, 甚至消失, 异质结失去光致电荷分离能力。是什么意思？

These two reasons there is an optimum thickness of the upper semiconductor heterojunction exceed the thickness of the built-in electric fields diminish, or even disappear, heterojunction lost the ability of Photoinduced Charge Separation.

Both of the above reasons, decide the quality of different upper semiconductor there is one of the best practice, more than the thickness, and thickness of the built-in electric field diminished role, or even disappear, heterogeneous knot separated I would be grateful if you would lose its call capa

Above two reasons had decided the neterogeny ties the upper formation semiconductor has a best thickness, surpasses this thickness, in constructs the electric field the function to weaken, even vanishes, the neterogeny knot loses the light to send the electric charge separation ability.

Two reasons above determines the top semiconductor there is an optimal thickness of heterostructure, more than this thickness, built-in electric field effect of weakening or even disappear, heterostructure light lost call charge-separation ability.

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