求翻译：80年代，量子阱结构的出现使半导体激光器出现了大的飞跃。具有量子阱结构的量子阱半导体激光器与双异质结半导体激光器(DH)相比，具有阈值电流密度低、量子效应好、温度特性好、输出功率大、动态特性好、寿命长、激射波长可以更短等等优点。目前，量子阱已成为人们公认的半导体激光器发展的根本动力。是什么意思？

Quantum well structure semiconductor lasers in the 1980s, there have been a big leap forward. Quantum well semiconductor lasers with quantum well structures and double heterostructure junction semiconductor lasers (dh) compared with a threshold current density is low, the quantum effects, temperatur

1980s, quantum sinking structure so that the semiconductor laser has a big step. With quantum sinking structure of quantum semiconductor lasers with the double sink heterogeneous-semiconductor lasers (DH) compared with a threshold current, low density, quantum effects and temperature characteristics

The 80's, the quantum pitfall structure appearance caused the semiconductor laser to appear the big leap.Has the quantum pitfall structure quantum pitfall semiconductor laser to tie semiconductor laser (DH) with the double neterogeny to compare, has the threshold value current density lowly, the qua

80, quantum well semiconductor lasers occurs appear in the structure of the great leap forward. Quantum well semiconductor lasers with quantum well structure and double-heterostructure laser diode (DH), has a low threshold current density and temperature characteristics of quantum effect is good, go