求翻译：1962年后期，美国研制成功GaAs同质结半导体激光器，第一代半导体激光器产生。但这一代激光器只能在液氮温度下脉冲工作，无实用价值。直到1967年人们使用液相外延的方法制成了单异质结激光器，实现了在室温下脉冲工作的半导体激光器。是什么意思？

Late 1962, the United States developed successful gaas homojunction semiconductor lasers, the first generation of the semiconductor laser. But this generation of lasers only at liquid nitrogen temperature pulsed operation, is of no practical value. Made of a single heterojunction laser pulse semicon

Late in 1962, the United States succeeded in developing the final GaAs semiconductor lasers, the first generation semiconductor lasers. But this generation lasers can only be in liquid nitrogen temperature, pulse, and no practical value. Until 1967 the use of liquid phase epitaxial methods are made

In 1962 the later period, US developed the GaAs homogeneity to tie the semiconductor laser successfully, first generation of semiconductor laser production.But this generation of laser only can under the liquid nitrogen temperature the pulse work, the not practical value.The people used the method u

In late 1962, United States GaAs with the successful development of heterojunction Semiconductor Laser, the first generation of semiconductor lasers. The generation of laser pulse at liquid nitrogen temperature only, no practical value. Until 1967 it used liquid-phase Epitaxial method, turning it in

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