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  • 匿名
关注:1 2013-05-23 12:21

求翻译:UFF力场模拟得到的结构,没有考虑极化的位点能,不同的计算方法得到的电子和空穴迁移率都在同一数量级,两种方法计算的都是空穴比电子迁移率略大;考虑位点能极化后,电子迁移率比空穴迁移率大是什么意思?

待解决 悬赏分:1 - 离问题结束还有
UFF力场模拟得到的结构,没有考虑极化的位点能,不同的计算方法得到的电子和空穴迁移率都在同一数量级,两种方法计算的都是空穴比电子迁移率略大;考虑位点能极化后,电子迁移率比空穴迁移率大
问题补充:

  • 匿名
2013-05-23 12:21:38
uff force field simulation of the structure, without considering the polarization, the different methods of calculation of the electron and hole mobility in the same order of magnitude, the hole of the two methods are slightly larger than the electron mobility; consider sites of polarization, the el
  • 匿名
2013-05-23 12:23:18
UFF field simulation of structures were taken into account, there is no polarization of the bit point to different methods of calculation of the electron and hole mobility are all in the same magnitude, two methods to calculate than the cavity is slightly larger electronic migration point; take into
  • 匿名
2013-05-23 12:24:58
The UFF field of force simulation obtains the structure, had not considered polarized the position spot energy, the different computational method obtains the electron and the hole mobility all in the identical magnitude, two method computations all are the hole are slightly bigger than the electron
  • 匿名
2013-05-23 12:26:38
UFF force field simulations are structure, without regard to the polarization, different calculation method of electron and hole mobility in the same order of magnitude, both terms are a hole slightly larger than the electron mobility; after considering polarization, electron mobility larger than th
  • 匿名
2013-05-23 12:28:18
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