求翻译：本发明提供一种相变存储单元及其制作方法，所述相变存储单元除半导体衬底、第一电极层、相变材料层、第二电极层和引出电极之外，还包括用于避免所述相变材料层在化学机械抛光工艺中过度腐蚀的高阻材料层，所述高阻材料层的阻值至少为所述相变材料层的阻值的十倍以上，可以避免相变材料层在化学机械抛光工艺中过度腐蚀的现象，提高相变存储单元的存储性能和成品率。是什么意思？

The invention provides a phase-change memory cell and its production method, as described in phase-change memory cells in addition to the semiconductor substrate, first electrode layer, phase-change material layer, the second electrode layer and the electrode leads, but also includes to avoid layer

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This invention provides one kind to change the memory cell and the manufacture method, states changes the memory cell except the semiconductor substrate, the first electrode level, changes the material level, the second electrode level and draws out outside the electrode, but also includes uses in a

This invention provides a phase variable storage unit and making method, by in phase variable storage unit except semiconductor lined end of, and first electrode layer, and phase variable material layer, and second electrode layer and leads electrode zhiwai, also including for avoid by in phase vari

This invention provides a phase variable storage unit and making method, by in phase variable storage unit except semiconductor lined end of, and first electrode layer, and phase variable material layer, and second electrode layer and leads electrode zhiwai, also including for avoid by in phase vari