求翻译：Si薄膜（1区）、SiC衬底（2区）和异质结界面（3区）FFT处理后的图分别如图所示。由图可知，Si薄膜与6H-SIC衬底分别具有明显的FFC和6H结构特征，其面间距分别为3.21Å和2.57Å.是什么意思？

after the processing of the the film si (1) sic substrate (Zone 2) and heterojunction interface (Zone 3) fft respectively, as shown. The figure shows that the Si thin film and the 6H-SiC substrate has obvious of ffc and 6h structural characteristics, the interplanar spacing of 3.21Å and 2.57Å, respe

Si film (zone 1), SiC backing (Region 2) and quality-interface (zone 3) FFT the figure as shown in the figure, respectively. We know that the figure 6 H Si thin film and backing SIC respectively - have a clear 6 H FFC and structural characteristics of the distance between 3.21 to 2.57 A A ˚ and ë .

After the Si thin film (1 area), the SiC substrate (2 areas) and the neterogeny ties the contact surface (3 areas) the FFT processing chart distinction like chart to show.The figure shows, the Si thin film and the 6H-SIC substrate have obvious FFC and the 6H structure characteristic separately, its

Si thin films (1), the SiC substrate (2) and the heterojunction interface (3) respectively, after FFT processing as shown in the figure. As the chart show, and 6H-SIC substrate of Si thin films has an obvious structural characteristics of FFC and 6H, respectively, their spacing 2.57 å and 3.21 å, re

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