求翻译：SiC衬底和Si薄膜的中的堆垛层错和孪晶等非周期性信息被丢掉。Si薄膜（1区）、SiC衬底（2区）和异质结界面（3区）FFT处理后的图分别如图所示。由图可知，Si薄膜与6H-SIC衬底分别具有明显的FFC和6H结构特征，其面间距分别为3.21Å和2.57Å.是什么意思？

sic substrate and si film in the stacking fault and twins the aperiodic information was lost. after the processing of the the film si (1) sic substrate (Zone 2) and heterojunction interface (Zone 3) fft respectively, as shown. The figure shows that the Si thin film and the 6H-SiC substrate has obvio

Si SiC backing and the thin film stack in the wrong layer, such as Crystal and its non-recurring information is lost. Si film (zone 1), SiC backing (Region 2) and quality-interface (zone 3) FFT the figure as shown in the figure, respectively. We know that the figure 6 H Si thin film and backing SIC

The SiC substrate and Si thin film piles up level mistake and twin crystals and so on aperiodic the informations is discarded.After the Si thin film (1 area), the SiC substrate (2 areas) and the neterogeny ties the contact surface (3 areas) the FFT processing chart distinction like chart to show.The

SiC substrates and stacking fault in Si thin films He Luanjing non-periodic information to be lost. Si thin films (1), the SiC substrate (2) and the heterojunction interface (3) respectively, after FFT processing as shown in the figure. As the chart show, and 6H-SIC substrate of Si thin films has an

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