求翻译：HRTEM图的傅里叶变化花样被处理，SiC衬底和Si薄膜的中的堆垛层错和孪晶等非周期性信息被丢掉。Si薄膜（1区）、SiC衬底（2区）和异质结界面（3区）FFT处理后的图分别如图所示。由图可知，Si薄膜与6H-SIC衬底分别具有明显的FFC和6H结构特征，其面间距分别为3.21Å和2.57Å.是什么意思？

hrtem FIG Fourier change tricks to be processed, the SiC substrate and si film in a stacking fault, and twins aperiodic information is lost. after the processing of the the film si (1) sic substrate (Zone 2) and heterojunction interface (Zone 3) fft respectively, as shown. The figure shows that the

HRTEM figure of the Fourier change SiC tricks has been processed, backing and Si film layer stack in the wrong and in crystal, and other non-recurring information is lost. Si film (zone 1), SiC backing (Region 2) and quality-interface (zone 3) FFT the figure as shown in the figure, respectively. We

HRTEM chart Fourier changes the pattern to process, the SiC substrate and Si thin film piles up level mistake and twin crystals and so on aperiodic the informations is discarded.After the Si thin film (1 area), the SiC substrate (2 areas) and the neterogeny ties the contact surface (3 areas) the FFT

HRTEM Fourier changing patterns has been processed, and SiC substrate of Si thin films by non-recurring information, such as stacking fault He Luanjing was lost. Si thin films (1), the SiC substrate (2) and the heterojunction interface (3) respectively, after FFT processing as shown in the figure. A

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